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XC2230L Datasheet(PDF) 33 Page - Infineon Technologies AG

Part # XC2230L
Description  16/32-Bit Single-Chip Microcontroller
PDF  112 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

XC2230L Datasheet(HTML) 33 Page - Infineon Technologies AG

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XC2230L, XC2234L
XC2000 Family / Econo Line
Functional Description
Data Sheet
29
V1.3, 2015-02
6 Kbytes of on-chip Data SRAM (DSRAM) are used for storage of general user data.
The DSRAM is accessed via a separate interface and is optimized for data access.
2 Kbytes of on-chip Dual-Port RAM (DPRAM) provide storage for user-defined
variables, for the system stack, and for general purpose register banks. A register bank
can consist of up to 16 word-wide (R0 to R15) and/or byte-wide (RL0, RH0, …, RL7,
RH7) General Purpose Registers (GPRs).
The upper 256 bytes of the DPRAM are directly bit addressable. When used by a GPR,
any location in the DPRAM is bit addressable.
1024 bytes (2
× 512 bytes) of the address space are reserved for the Special Function
Register areas (SFR space and ESFR space). SFRs are word-wide registers which are
used to control and monitor functions of the different on-chip units. Unused SFR
addresses are reserved for future members of the XC2000 Family. In order to ensure
upward compatibility they should either not be accessed or written with zeros.
The on-chip Flash memory stores code, constant data, and control data. The
160 Kbytes of on-chip Flash memory consist of 1 module of 32 Kbytes (preferably for
data storage) and 1 module of 128 Kbytes. Each module is organized in 4-Kbyte sectors.
The uppermost 4-Kbyte sector of segment 0 (located in Flash module 0) is used
internally to store operation control parameters and protection information.
Each sector can be separately write protected
1), erased and programmed (in blocks of
128 Bytes). The complete Flash area can be read-protected. A user-defined password
sequence temporarily unlocks protected areas. The Flash modules combine 128-bit
read access with protected and efficient writing algorithms for programming and erasing.
Dynamic error correction provides extremely high read data security for all read access
operations. Access to different Flash modules can be executed in parallel.
For Flash parameters, please see Section 4.6.
Memory Content Protection
The contents of on-chip memories can be protected against soft errors (induced e.g. by
radiation) by activating the parity mechanism or the Error Correction Code (ECC).
The parity mechanism can detect a single-bit error and prevent the software from using
incorrect data or executing incorrect instructions.
The ECC mechanism can detect and automatically correct single-bit errors. This
supports the stable operation of the system.
It is strongly recommended to activate the ECC mechanism wherever possible because
this dramatically increases the robustness of an application against such soft errors.
1) To save control bits, sectors are clustered for protection purposes, they remain separate for
programming/erasing.



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