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AS4C64M32MD2-25BCN Datasheet(PDF) 38 Page - Alliance Semiconductor Corporation

Part # AS4C64M32MD2-25BCN
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M32MD2-25BCN Datasheet(HTML) 38 Page - Alliance Semiconductor Corporation

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4.8 LPDDR2-SX: Precharge operation
The Precharge command is used to precharge or close a bank that has been activated. The Precharge command is
initiated by having CS# LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3 HIGH at the rising edge of the clock. The
Precharge Command can be used to precharge each bank independently or all banks simultaneously. For 4-bank
devices, the AB flag, and the bank address bits, BA0 and BA1, are used to determine which bank(s) to precharge. For
8-bank devices, the AB flag, and the bank address bits, BA0, BA1, and BA2, are used to determine which bank(s) to
precharge. The bank(s) will be available for a subsequent row access tRPab after an All-Bank Precharge command is
issued and tRPpb after a Single-Bank Precharge command is issued.
In order to ensure that 8-bank devices do not exceed the instantaneous current supplying capability of 4-bank devices,
the Row Precharge time (tRP) for an All-Bank Precharge for 8-bank devices (tRPab) will be longer than the Row
Precharge time for a Single-Bank Precharge (tRPpb). For 4-bank devices, the Row Precharge time (tRP) for an All-
Bank Precharge (tRPab) is equal to the Row Precharge time for a Single-Bank Precharge (tRPpb).
Figure 4-1 shows Activate to Precharge timing.
Table 8 – Bank selection for Precharge by address bits
AB (CA4r)
BA2 (CA9r)
BA1 (CA8r)
BA0 (CA7r)
Precharged Bank(s)
Precharged Bank(s)
4-bank device
8-bank device
0
0
0
0
Bank 0 only
Bank 0 only
0
0
0
1
Bank 1 only
Bank 1 only
0
0
1
0
Bank 2 only
Bank 2 only
0
0
1
1
Bank 3 only
Bank 3 only
0
1
0
0
Bank 0 only
Bank 4 only
0
1
0
1
Bank 1 only
Bank 5 only
0
1
1
0
Bank 2 only
Bank 6 only
0
1
1
1
Bank 3 only
Bank 7 only
1
Don't care
Don't care
Don't care
All Banks
All Banks
4.8.1
LPDDR2-SX: Burst Read operation followed by Precharge
For the earliest possible precharge, the precharge command may be issued BL/2 clock cycles after a Read command.
For an untruncated burst, BL is the value from the Mode Register. For a truncated burst, BL is the effective burst
length. A new bank active (command) may be issued to the same bank after the Row Precharge time (tRP). A
precharge command cannot be issued until after tRAS is satisfied.
For LPDDR2-S4 devices, the minimum Read to Precharge spacing has also to satisfy a minimum analog time from the
rising clock edge that initiates the last 4-bit prefetch of a Read command. This time is called tRTP (Read to Precharge).
For LPDDR2-S4 devices, tRTP begins BL/2 - 2 clock cycles after the Read command. If the burst is truncated by a
BST command or a Read command to a different bank, the effective “BL” shall be used to calculate when tRTP begins.
See Table 9 for Read to Precharge timings for LPDDR2-S4
AS4C64M32MD2-25BCN
AS4C128M16MD2-25BCN
Confidential
- 38/129 -
Rev.1.0 July 2016



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