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MM912F634CV2AP Datasheet(PDF) 22 Page - Freescale Semiconductor, Inc

Part # MM912F634CV2AP
Description  Integrated S12 Based Relay Driver with LIN
PDF  335 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MM912F634CV2AP Datasheet(HTML) 22 Page - Freescale Semiconductor, Inc

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Electrical Characteristics
Dynamic Electrical Characteristics
MM912F634
Freescale Semiconductor
22
Table 31. Dynamic Electrical Characteristics - Window Watchdog
Ratings
Symbol
Min
Typ
Max
Unit
Initial Non-window Watchdog Timeout
tIWDTO
110
150
190
ms
Watchdog Timeout Accuracy - not trimmed
WDAC
-35
-
35
%
Watchdog Timeout Accuracy - trimmed
WDACT
-5.0
-
5.0
%
Table 32. Dynamic Electrical Characteristics - High Side Drivers - HS
Ratings
Symbol
Min
Typ
Max
Unit
High Side Operating Frequency(25)
Load Condition: CLOAD ≤ 2.2 nF; RLOAD ≥ 500 Ω
fHS
--
50
kHz
Note:
25. Guaranteed by design.
Table 33. Dynamic Electrical Characteristics - Low Side Drivers - LS
Ratings
Symbol
Min
Typ
Max
Unit
Low Side Operating Frequency
fLS
--
10
kHz
Table 34. Dynamic Electrical Characteristics - LIN Physical Layer Interface - LIN
Ratings
Symbol
Min
Typ
Max
Unit
Bus Wake-up Deglitcher (Sleep and Stop Mode)
tPROPWL
60
80
100
µs
Fast Bit Rate (Programming Mode)
BRFAST
-
-
100
kBit/s
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)(26)
tREC_PD
--
6.0
µs
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR
tREC_SYM
-2.0
-
2.0
µs
LIN Driver - 20.0 kBit/s; Bus load conditions (CBUS; RBUS): 1.0 nF; 1.0 kΩ / 6,8 nF;660 Ω / 10 nF;500 Ω. Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 5 and Figure 6.
Duty Cycle 1:
THREC(MAX) = 0.744 x VSUP
THDOM(MAX) = 0.581 x VSUP
7.0 V
≤ VSUP ≤ 18 V; tBit = 50 µs;
D1 = tBUS_REC(MIN)/(2 x tBit)
D1
0.396
-
-
Duty Cycle 2:
THREC(MIN) = 0.422 x VSUP
THDOM(MIN) = 0.284 x VSUP
7.6 V
≤ VSUP ≤ 18 V; tBIT = 50 µs
D2 = tBUS_REC(MAX)/(2 x tBIT)
D2
-
-
0.581
LIN Driver - 10.0 kBit/s; Bus load conditions (CBUS; RBUS): 1.0 nF; 1.0 kΩ / 6,8 nF;660 Ω / 10 nF;500 Ω. Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 5 and Figure 7.
Duty Cycle 3:
THREC(MAX) = 0.778 x VSUP
THDOM(MAX) = 0.616 x VSUP
7.0 V
≤ VSUP ≤ 18 V; tBIT = 96 µs
D3 = TBUS_REC(MIN)/(2 x tBIT)
D3
0.417
-
-
Duty Cycle 4:
THREC(MIN) = 0.389 x VSUP
THDOM(MIN) = 0.251 x VSUP
7.6 V
≤ VSUP ≤ 18 V; tBIT = 96 µs
D4 = tBUS_REC(MAX)/(2 x tBIT)
D4
-
-
0.590



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