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MM912F634CV2AP Datasheet(PDF) 16 Page - Freescale Semiconductor, Inc |
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MM912F634CV2AP Datasheet(HTML) 16 Page - Freescale Semiconductor, Inc |
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16 / 335 page  Electrical Characteristics Static Electrical Characteristics MM912F634 Freescale Semiconductor 16 (continued) Table 16. Static Electrical Characteristics - High Side Drivers - HS Ratings Symbol Min Typ Max Unit Output Drain-to-Source On resistance TJ =25°C, ILOAD =50mA; VSUP > 9.0 V TJ= 150 °C, ILOAD =50 mA; VSUP > 9.0 V TJ = 150 °C, ILOAD = 30 mA; 5.5V < VSUP < 9.0 V RDS(ON) - - - - - - 7.0 10 14 Ohm Output Current Limitation (0 V < VOUT < VSUP - 2.0 V) ILIMHSX 60 110 250 mA Open Load Current Detection IOLHSX -5.0 7.5 mA Leakage Current (-0.2 V < VHSx < VS2 + 0.2 V) ILEAK -- 10 µA Current Limitation Flag Threshold (5.5 V < VSUP < 27 V) VTHSC VSUP -2 - - V Table 17. Static Electrical Characteristics - Low Side Drivers - LS Ratings Symbol Min Typ Max Unit Output Drain-to-Source On resistance TJ =25°C, ILOAD = 150 mA, VSUP > 9.0 V TJ = 150 °C, ILOAD = 150 mA, VSUP > 9.0 V TJ = 150 °C, ILOAD = 120 mA, 5.5 V < VSUP < 9.0 V RDS(ON) – – – – – – 2.5 4.5 10 Ohm Output Current Limitation (2.0 V < VOUT < VSUP)ILIMLSX 180 275 380 mA Open Load Current Detection IOLLSX -8.0 12 mA Leakage Current (-0.2 V < VOUT < VS1) ILEAK -- 10 µA Active Output Energy Clamp (IOUT = 150 mA) VCLAMP 40 - 45 V Coil Series Resistance (IOUT =150 mA) RCOIL 120 - Ohm Coil Inductance (IOUT = 150 mA) RCOIL -- 400 m Η Current Limitation Flag Threshold (5.5 V < VSUP < 27 V) VTHSC 2.0 - - V Table 18. Static Electrical Characteristics - LIN Physical Layer Interface - LIN Ratings Symbol Min Typ Max Unit Current Limitation for Driver dominant state. VBUS =18 V IBUSLIM 40 120 200 mA Input Leakage Current at the Receiver incl. Pull-up Resistor RSLAVE; Driver OFF; VBUS = 0 V; VBAT = 12 V IBUS_PAS_DOM -1.0 - - mA Input Leakage Current at the Receiver incl. Pull-up Resistor RSLAVE; Driver OFF; 8.0 V < VBAT < 18 V; 8.0 V < VBUS < 18 V; VBUS ≥ VBAT IBUS_PAS_REC - - 20 µA Input Leakage Current; GND Disconnected; GNDDEVICE = VSUP; 0 < VBUS < 18 V; VBAT = 12 V IBUS_NO_GND -1.0 - 1.0 mA Input Leakage Current; VBAT disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18 V IBUS_NO_BAT - - 100 µA Receiver Input Voltage; Receiver Dominant State VBUSDOM -- 0.4 VSUP Receiver Input Voltage; Receiver Recessive State VBUSREC 0.6 - - VSUP Receiver Threshold Center (VTH_DOM + VTH_REC)/2 VBUS_CNT 0.475 0.5 0.525 VSUP Receiver Threshold Hysteresis (VTH_REC - VTH_DOM)VBUS_HYS - - 0.175 VSUP Voltage Drop at the serial Diode DSER_INT 0.4 0.7 1.0 V LIN Pull-up Resistor RSLAVE 20 30 60 kOhm Bus Wake-up Threshold from Stop or Sleep(14) VWUP 4.5 5.0 6.0 V Bus Dominant Voltage VDOM -- 2.5 V Note: 14. Considering drop from VBAT to LIN, at very low VBAT level, the internal logic will detect a dominant as the threshold will not decrease with VSUP. |
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