MM912F634CV2AP datasheet(26/335 Pages) FREESCALE

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Electrical Characteristics

Dynamic Electrical Characteristics

MM912F634

Freescale Semiconductor

3.6.2.1.2

Burst Programming

This applies only to the Flash, where up to 64 words in a row can be programmed consecutively, using burst programming by

keeping the command pipeline filled. The time to program a consecutive word can be calculated as:

The time to program a whole row is:

Burst programming is more than 2 times faster than single word programming.

3.6.2.1.3

Sector Erase

NOTE

The sector erase cycle is divided into 16 individual erase pulses to achieve faster system

response during the erase flow. The given erase time (tERA) specifies the time considering

consecutive pulses.

Erasing a 512-byte Flash sector takes:

The setup time can be ignored for this operation.

3.6.2.1.4

Mass Erase

Erasing a NVM block takes:

The setup time can be ignored for this operation.

bwpgm

NVMOP

-------------------------

⋅

bus

-----------

⋅

brpgm

swpgm

63 t

bwpgm

⋅

era

4000

NVMOP

-------------------------

⋅

≈

tmass 20000

fNVMOP

-------------------------

≈

MM912F634CV2AP Datasheet(PDF) 26 Page - Freescale Semiconductor, Inc

MM912F634CV2AP Datasheet(HTML) 26 Page - Freescale Semiconductor, Inc

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