MM912F634CV2AP datasheet(27/335 Pages) FREESCALE

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Electrical Characteristics

Dynamic Electrical Characteristics

MM912F634

Freescale Semiconductor

3.6.2.1.5

Blank Check

The time it takes to perform a blank check on the Flash is dependant on the location of the first non-blank word, starting at relative

address zero. It takes one bus cycle per word to verify plus a setup of the command.

Table 37. NVM Timing Characteristics

Rating

Symbol

Min

Typ

Max

Unit

Bus frequency for programming or erase operations

fNVMBUS

1.0

MHz

Operating frequency

fNVMOP

150

200

kHz

Single word programming time

tSWPGM

46(31)

-74.5(31)

μs

Flash burst programming consecutive word

tBWPGM

20.4(31)

-31(32)

μs

Flash burst programming time for 64 words(34)

tBRPGM

1331.2(31)

2027.5(32)

μs

Sector erase time(32)

tERA

20(33)

-26.7(32)

Mass erase time

tMASS

100(35)

133(32)

Blank check time Flash per block

tCHECK

11(34)

65546(35)

tCYC

Note:

31. Minimum programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency fBUS.

32. The sector erase cycle is divided into 16 individual erase pulses to achieve faster system response during the erase flow. The given

erase time (tERA) specifies the time considering consecutive pulses.

33. Minimum erase times are achieved under maximum NVM operating frequency, fNVMOP.

34. Minimum time, if first word in the array is not blank.

35. Maximum time to complete check on an erased block.

tcheck location tcyc 10 tcyc

MM912F634CV2AP Datasheet(PDF) 27 Page - Freescale Semiconductor, Inc

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